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SUD50P06-15L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
1.8
1.6
V GS = 10 V
I D = 17 A
100
1.4
1.2
1.0
0.8
0.6
10
1
T J = 150 °C
T J = 25 °C
- 50
- 25
0
25
50
75
100
125
150
175
0.0
0.3 0.6 0.9 1.2
1.5
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
60
100
I DM Limited
Limited by R DS(on)*
50
P(t) = 0.0001
40
30
20
10
I D(on)
Limited
T C = 25 °C
P(t) = 0.001
10
Single Pulse
P(t) = 0.01
1
BVDSS Limited
P(t) = 0.1
P(t) = 1
0
0.1
1 10 100
0
25
50
75
100
125
150
175
V DS - Drain-to-Source Voltage (V)
2
1
0.1
T C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72250 .
www.vishay.com
4
Document Number: 72250
S10-2545-Rev. C, 08-Nov-10
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